Shores ivanovich alferov biography

  • Zhores Ivanovich Alferov was a Soviet and Russian physicist and academic who contributed significantly to the creation of modern heterostructure physics and electronics.
  • Zhores Ivanovich Alferov was a Soviet and Russian physicist and academic who contributed significantly to the creation of modern heterostructure physics and.
  • During World War I, he was a brave hussar, a non-commissioned officer of the Life Guards, a holder of the St. George Order.

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    Zhores Ivanovich Alferov

    2001 Kyoto Prize Laureates

    Advanced Technology

    Electronics

    /　　Physicist

    1930 - 2019

    Director, The Ioffe Institute of Physics and Technology, Vice President, The Russian Academy of Sciences

    Workshop

    Semiconductor Laser - Continuous Operation and Progress for the Future -

    2001

    11/12Mon

    13:00 -17:30

    Place：Kyoto International Conference Center

    Report

    Achievement Digest

    A Pioneering Step in the Development of Optoelectronics through Success in Continuous Operation of Semiconductor Lasers at Room Temperature

    Dr. Alferov, Dr. Hayashi and Dr. Panish have made pioneering contributions to the development of optoelectronics as we know it today with the achievement of continuous wave operation of semiconductor lasers at room temperature. They have thus paved the way for commercial use of electronic devices that play an essential role in the building of information infrastructures supporting the worldwide IT revolution.

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  • shores ivanovich alferov biography

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    Text Biography

    Alferov, Zhores Ivanovich (1930– )

    Russian physicist who with German physicist Herbert Kroemer and US electrical engineer Jack S Kilby shared the Nobel Prize for Physics in 2000 for their contributions to the field of information and communication technology. Alferov played a leading role in the development of semiconductor heterostructures used in high‐speed electronics applications and optoelectronics (the branch of electronics concerned with the development of devices that respond to both electrons and photons).

    In 1963, Alferov proposed the principle behind the construction of a laser made from heterostructured semiconductor components, independently of Herbert Kroemer. Heterostructured semiconductors, such as gallium arsenide, are made up from alternating thin layers of semiconducting materials. In 1969, Alferov produced the first heterostructure to have clear borders between the different layers, which enabled the development of semiconductor lasers that

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    Zhores Ivanovich Alferov

    OSA Fellow Zhores Ivanovich Alferov attended the Ul’yanov Electrotechnical Institute in Leningrad (LETI) from which he graduated in 1952. He began work at the Physico-Technical Institute in 1953, and by March of that year had helped in the creation of the first Soviet p-n junction transistor. He became director of the Institute in 1987, and remained there until his death.

    He earned a Candidate of Sciences in Technology degree in 1961 and a doctor of sciences in physics and mathematics in 1970 from the Ioffe Institute.

    In 1973, he took over as chair of optoelectronics at the St Petersburg State Electrotechnical University (former LETI), and in 1988 he was appointed to Dean of the Faculty of Physics and Technology at the St Petersburg Technical University.

    In 1989, he was elected president of the Leningrad Scientific Center of the Academy of Sciences of the USSR; and, in April 1990, Vice-President of the Academy of Sciences of the USSR. He publishe